Crystal growth and optical properties of Ce-doped (La,Y)2Si2O7 single crystal
نویسندگان
چکیده
We have grown Ce-doped (La,Y)2Si2O7 single crystal by micro-pulling-down method and investigated its optical scintillation properties. successfully prepared the with (Ce0.015La0.600Y0.385)2Si2O7 composition. The observed thermal quenching process could be characterized temperature (T50%) of 526 K activation energy was determined to 0.62 eV. Further considering factors, it found that caused at least ionization maybe also classical quenching. light output decay time were evaluated ~12,000 photons/MeV ~42 ns, respectively. These results indicate has a great potential for application in materials.
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2021
ISSN: ['1873-5002', '0022-0248']
DOI: https://doi.org/10.1016/j.jcrysgro.2021.126252